Interdiffusion and relaxation in metalorganic vapor phase epitaxy grown InGaAs/GaAs strained layer quantum wells
Identifieur interne : 000178 ( Main/Exploration ); précédent : 000177; suivant : 000179Interdiffusion and relaxation in metalorganic vapor phase epitaxy grown InGaAs/GaAs strained layer quantum wells
Auteurs : RBID : ISTEX:11664_1994_Article_BF02655268.pdfEnglish descriptors
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Abstract
Low pressure metalorganic vapor phase epitaxy grown strained InGaAs/GaAs quantum well structures have been characterized by photoluminescence and x-ray diffraction. It is shown that beyond the pseudomorphic limit, these structures show considerable gallium/indium interdiffusion at the interfaces and partial strain relaxation in the quantum well layers.
DOI: 10.1007/BF02655268
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<record><TEI><teiHeader><fileDesc><titleStmt><title>Interdiffusion and relaxation in metalorganic vapor phase epitaxy grown InGaAs/GaAs strained layer quantum wells</title><author><name>A. K. Srivastava</name><affiliation wicri:level="1"><mods:affiliation>Tata Institute of Fundamental Research, Homi Bhabha Road, 400005, Bombay, India</mods:affiliation><country xml:lang="fr">Inde</country><wicri:regionArea>Tata Institute of Fundamental Research, Homi Bhabha Road, 400005, Bombay</wicri:regionArea><wicri:noRegion>Bombay</wicri:noRegion></affiliation></author><author><name>B. M. Arora</name><affiliation wicri:level="1"><mods:affiliation>Tata Institute of Fundamental Research, Homi Bhabha Road, 400005, Bombay, India</mods:affiliation><country xml:lang="fr">Inde</country><wicri:regionArea>Tata Institute of Fundamental Research, Homi Bhabha Road, 400005, Bombay</wicri:regionArea><wicri:noRegion>Bombay</wicri:noRegion></affiliation></author><author><name>S. Banerjee</name><affiliation wicri:level="1"><mods:affiliation>Tata Institute of Fundamental Research, Homi Bhabha Road, 400005, Bombay, India</mods:affiliation><country xml:lang="fr">Inde</country><wicri:regionArea>Tata Institute of Fundamental Research, Homi Bhabha Road, 400005, Bombay</wicri:regionArea><wicri:noRegion>Bombay</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:11664_1994_Article_BF02655268.pdf</idno><date when="1994">1994</date><idno type="doi">10.1007/BF02655268</idno><idno type="wicri:Area/Main/Corpus">000144</idno><idno type="wicri:Area/Main/Curation">000144</idno><idno type="wicri:Area/Main/Exploration">000178</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>InGaAs/GaAs</term><term>Interdiffusion</term><term>Metalorganic vapor phase epitaxy(MOVPE)</term><term>Quantum wells</term><term>Strain relaxation</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">Low pressure metalorganic vapor phase epitaxy grown strained InGaAs/GaAs quantum well structures have been characterized by photoluminescence and x-ray diffraction. It is shown that beyond the pseudomorphic limit, these structures show considerable gallium/indium interdiffusion at the interfaces and partial strain relaxation in the quantum well layers.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="198b4a264a6613a54818aaebf761ed8a62964517"><titleInfo lang="eng"><title>Interdiffusion and relaxation in metalorganic vapor phase epitaxy grown InGaAs/GaAs strained layer quantum wells</title></titleInfo><name type="personal"><namePart type="given">A. K.</namePart><namePart type="family">Srivastava</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Tata Institute of Fundamental Research, Homi Bhabha Road, 400005, Bombay, India</affiliation></name><name type="personal"><namePart type="given">B. M.</namePart><namePart type="family">Arora</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Tata Institute of Fundamental Research, Homi Bhabha Road, 400005, Bombay, India</affiliation></name><name type="personal"><namePart type="given">S.</namePart><namePart type="family">Banerjee</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Tata Institute of Fundamental Research, Homi Bhabha Road, 400005, Bombay, India</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, New York</publisher><dateCreated encoding="w3cdtf">1993-03-25</dateCreated><dateValid encoding="w3cdtf">2007-06-19</dateValid><copyrightDate encoding="w3cdtf">1994</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Low pressure metalorganic vapor phase epitaxy grown strained InGaAs/GaAs quantum well structures have been characterized by photoluminescence and x-ray diffraction. It is shown that beyond the pseudomorphic limit, these structures show considerable gallium/indium interdiffusion at the interfaces and partial strain relaxation in the quantum well layers.</abstract><subject lang="eng"><genre>Keywords</genre><topic>InGaAs/GaAs</topic><topic>interdiffusion</topic><topic>metalorganic vapor phase epitaxy(MOVPE)</topic><topic>quantum wells</topic><topic>strain relaxation</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>JEM</title></titleInfo><titleInfo><title>Journal of Electronic Materials</title><partNumber>Year: 1994</partNumber><partNumber>Volume: 23</partNumber><partNumber>Number: 2</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1994-02-01</dateIssued><copyrightDate encoding="w3cdtf">1994</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Optical and Electronic Materials</topic><topic>Characterization and Evaluation of Materials</topic><topic>Solid State Physics and Spectroscopy</topic><topic>Electronics and Microelectronics, Instrumentation</topic></subject><identifier type="issn">0361-5235</identifier><identifier type="issn">Electronic: 1543-186X</identifier><identifier type="matrixNumber">11664</identifier><identifier type="local">IssueArticleCount: 30</identifier><recordInfo><recordOrigin>The Mineral, Metal & Materials Society, Inc., 1994</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF02655268</identifier><identifier type="matrixNumber">Art22</identifier><identifier type="local">BF02655268</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>191</start><end>194</end></extent></part><recordInfo><recordOrigin>The Mineral, Metal & Materials Society, Inc., 1994</recordOrigin><recordIdentifier>11664_1994_Article_BF02655268.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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